Resumen
An ultra-wideband hybrid structure (100) for transmitting high-frequency electrical signals, the structure comprising a substrate (110), a high-speed semiconductor substrate (105) connected to the substrate (110) of the ultra-wideband structure (100), an electrically conductive interface (115) established between the substrate (110) and the high-speed semiconductor substrate (105), an ultra-high-speed device, a structure (DRW) and a structure (TSA) connected to the substrate (110), the electrically conductive interface (115) being connected to the substrate (110) of the ultra-wideband structure (100). The ultra-high-speed device defines a first access port (P1) and is established on a high-speed semiconductor substrate (105), a dielectric waveguide structure (DRW) defining a second access is established on the substrate (110) and the high-speed semiconductor substrate (105), the structure (DRW) comprising a tapered end connectable to the first access port (P1) of the ultra-high-speed device, a metal waveguide structure (TSA) providing a low-pass characteristic interconnect, a metal waveguide structure (TSA) is established on a substrate (110) and a high speed semiconductor substrate (105), where the metal waveguide structure (TSA) comprises a metal waveguide pattern defining a tapered coupler connected to an access port (P1) of a high speed circuit or component.
Reivindicaciones
1. An ultra-wideband hybrid structure (100) for transmitting or receiving high-frequency electrical signals, the structure (100) comprising: - a substrate (110); - a high-speed semiconductor substrate (105) connected to the substrate (110); - an electrical interconnection (115) established between the substrate (110) and the high-speed semiconductor substrate (105); - an ultrahigh speed device for the generation or detection of high frequency signals comprising a first access port (P1) and established on the high-speed semiconductor substrate (105); - a dielectric waveguide structure (DRW) comprising a second access port (P2) providing a high-pass characteristic interconnection operating over a high frequency range starting from a low cut-off frequency fCL in the microwave range or in the millimeter-wave range, the structure (DRW) established on the substrate (110) and on the high-speed semiconductor substrate (105), wherein the structure (DRW) comprises a tapered end facing the first access port (P1) of the ultrahigh speed device; a metal waveguide structure (TSA) providing a low-pass characteristic interconnection, operating over a low frequency range from DC up to a high cut-off frequency fCH in the millimeter wave range, the structure (TSA) established on the substrate (110) and on the high-speed semiconductor substrate (105), wherein the metal waveguide structure (TSA) comprises a metal waveguide pattern defining a tapered coupler, preferably a Tapered Slot Antenna "TSA", around the tapered end of the dielectric waveguide structure (DRW) and connected to the first access port (P1) of the ultrahigh speed device. 2. The ultra-wideband hybrid structure (100) according to claim 1, wherein the substrate (110) has a rectangular shape. 3. The ultra-wideband hybrid structure (100) according to claim 1, wherein the substrate (110) has a shape tapered to the metal waveguide structure (TSA). 4. The ultra-wideband hybrid structure (100) for high-frequency electrical signals according to any of the preceding claims, further comprising a tapered structure (120), etched on the high-speed semiconductor substrate (105) and/or the substrate (110). 5. The ultra-wideband hybrid structure (100) for high-frequency electrical signals according to claim 4, wherein the tapered structure (120) is a horn structure. 6. The ultra-wideband hybrid structure (100) for high-frequency electrical signals according to claims 1 to 5, wherein the ultrahigh speed device is an optoelectronic device. 7. The ultra-wideband hybrid structure (100) for high-frequency electrical signals according to claim 6, further comprising: - an optical fiber (130) providing edge optical illumination or vertical optical illumination to the high-speed photodiode. 8. The ultra-wideband hybrid structure (100) for high-frequency electrical signals according to claim 6 or 7, wherein the optoelectronic device is a high-speed photodiode or a photoconductive antenna. 9. The ultra-wideband hybrid structure (100) for high-frequency electrical signals according to claim 8, further comprising: an optical waveguide (125) between the optical fiber (130) and the high-speed photodiode or the photoconductive antenna when the optical fiber (130) provides edge optical illumination. 10. The ultra-wideband hybrid structure (100) for high-frequency electrical signals according to claims 1 to 5, wherein the ultrahigh speed device is an electronic device. 11. The ultra-wideband hybrid structure (100) for high-frequency electrical signals according to any of the preceding claims, wherein the high-speed semiconductor substrate (105) comprises III-V compound semiconductors, such as Indium Phosphide, Gallium Nitride, Gallium Arsenide, InAIAs/lnGaAs or AIGaN/GaN. 12. The ultra-wideband hybrid structure (100) for high-frequency electrical signals according to any of the preceding claims, wherein the electrical interconnection (115) comprises wire bonding, ribbon bonding, flip-chip bonding, or epoxy. 13. The ultra-wideband hybrid structure (100) for high-frequency electrical signals according to any of the preceding claims, wherein the substrate (110) comprises RF substrates such as quartz, laminates and ceramics or Silicon.
