Resumen
[0001] A light-emitting diode chip comprising: - a semiconductor body (1) having a plurality of active regions (2), wherein - at least one of the active regions (2) has at least two subregions (21...28), - the active region (2) has at least one barrier region (3) arranged between two adjacent subregions (21...28) of said at least two subregions (21...28), - the at least two subregions (21...28) emit light of mutually different colour during operation of the light-emitting diode chip, - in at least one of the subregions (21...28) the emission of light is generated electrically, and - the barrier region (3) is configured to hinder a thermally activated redistribution of charge carriers between the two adjacent subregions (21...28), is specified.
Reivindicaciones
1. A light-emitting diode chip comprising: - a semiconductor body (1) having a plurality of active regions (2), wherein - at least one of the active regions (2) has at least two subregions (21...28), - the active region (2) has at least one barrier region (3) arranged between two adjacent subregions (21...28) of said at least two subregions (21...28), - the at least two subregions (21...28) emit light of mutually different colour during operation of the light-emitting diode chip, - in at least one of the subregions (21...28) the emission of light is generated electrically, and - the barrier region (3) is configured to hinder a thermally activated redistribution of charge carriers between the two adjacent subregions (21...28). 2. The light-emitting diode chip according to the preceding claim, wherein - the active regions (2) have a direction of main extension (R), and - at least some of the active regions (2) are spaced apart from each other in a direction (L) which runs lateral with respect to the direction of main extension (R) or at least some of the active regions (2) partly touch each other in the lateral direction. 3. The light-emitting diode chip according to one of the preceding claims, wherein - the subregions (21...28) are arranged along the direction of main extension (R) of their active region (2) and at least one barrier region (3) is arranged between each pair of adjacent subregions (21...28). 4. The light-emitting diode chip according to one of the preceding claims, wherein - the active regions (2) are nanostructures and at least one of the active regions (2) has a maximum diameter of 1000 nm and an aspect ratio of at least 3. 5. The light-emitting diode chip according to one of the preceding claims, wherein - each subregion (21...28) is based on a nitride compound semiconductor material comprising indium, in particular based on an InGaN semiconductor material. 6. The light-emitting diode chip according to one of the preceding claims, wherein - each barrier region (3) is based on at least one nitride compound semiconductor material having a greater band gap than the subregions (21...28) adjoining the barrier region (3) . 7. The light-emitting diode chip according to one of the preceding claims, wherein - each barrier region (3) is based on GaN or AlInGaN or InGaN. 8. The light-emitting diode chip according to one of the preceding claims, wherein - in at least two subregions (21...28) of the at least one active region (2) the emission of light is generated electrically, and - a tunnel junction (6) is arranged between two electrically driven subregions (21...28). 9. The light-emitting diode chip according to the preceding claim, wherein - the barrier region (3) between the two electrically driven subregions (21...28) is employed as the tunnel junction (6). 10. The light-emitting diode chip according to one of the preceding claims, wherein - in at least one first subregion (21...28) of the at least one active region (2) the emission of light is generated electrically and in at least one second subregion (21...28) of the same active region (2) the emission of light is due to optically pumping by light of the first subregion (21...28). 11. The light-emitting diode chip according to the preceding claim, wherein - the active region (2) forms a light-guide which guides the light of the at least one first subregion (21...28) along the direction of main extension (R) to the at least one second subregion. 12. The light-emitting diode chip according to one of the preceding claims, wherein - at least one of the active regions (2) is configured to emit white light. 13. The light-emitting diode chip according to one of the preceding claims, wherein - at least one of the active regions (2) has a subregion (21...28) which is configured to emit white light. 14. A method for producing a light-emitting diode chip comprising the following steps: - epitaxial growth of a semiconductor body (1) having a plurality of active regions (2), wherein - at least one of the active regions (2) has at least two subregions (21...28), - the active region (2) has at least one barrier region (3) arranged between two adjacent subregions (21...28) of said at least two subregions (21...28), - the at least two subregions (21...28) emit light of mutually different colour during operation of the light-emitting diode chip, - in at least one of the subregions (21...28) the emission of light is generated electrically, - the barrier region (3) is configured to hinder a thermally activated redistribution of charge carriers between the two adjacent subregions (21...28), - the active regions (2) have a direction of main extension (R), - the active regions (2) are spaced apart from each other in a direction (L) which runs lateral with respect to the direction of main extension (R), - the subregions (21...28) are arranged along the direction of main extension (R) of their active region (2) and at least one barrier region (3) is arranged between each pair of adjacent subregions (21...28), - the active regions (2) are nanostructures and at least one of the active regions (2) has a maximum diameter of 1000 nm and an aspect ratio of at least 3, - each subregion (21...28) is based on a nitride compound semiconductor material comprising indium, in particular based on an InGaN semiconductor material, - each barrier region (3) is based on at least one nitride compound semiconductor material having a greater band gap than the subregions (21...28) adjoining the barrier region (3), - in at least one first subregion (21...28) of the at least one active region (2) the emission of light is generated electrically and in at least one second subregion (21...28) of the same active region (2) the emission of light is due to optically pumping by light of the first subregion (21...28), - the active region (2) forms a light-guide which guides the light of the at least one first subregion (21...28) along the direction of main extension (R) to the at least one second subregion, - at least one of the active regions (2) is configured to emit white light, and - at least one of the active regions (2) has a subregion (21...28) which is configured to emit white light. 15. The method according to the preceding claim, wherein a light-emitting diode chip according to one of the claims 1 to 13 is produced.
