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Atomic layer deposition equipment and method for integrating in-situ switchable mask plateCM Patents

Índice de la ficha

Updated at
24/07/2026
Numero publicacion
CN.121992363.A
Fecha publicacion
08/05/2026
Numero solicitud
CN202610151876
Fecha presentacion
03/02/2026

En detalle

Resumen

The invention discloses atomic layer deposition equipment and method for integrating an in-situ switchable mask plate, and belongs to the technical field of semiconductor micro-nano manufacturing. The equipment comprises a deposition cavity, a multi-source precursor transport system, a built-in mask plate library, a switching mechanism, a substrate pose adjusting device and a control system. The mask plate library and the switching mechanism are integrated in a vacuum environment, and have multi-station mask plate bearing and high-precision positioning functions; the substrate pose adjusting device is matched with the microspur adjusting unit, so that the mask plate and the substrate can be switched between a non-contact switching state and a tight fitting deposition state. Under the condition of maintaining high vacuum, automatic replacement of mask plates with different patterns and alternate deposition of multi-layer precursor pulse are realized through program control, so that the problems of interface pollution and alignment deviation caused by frequent vacuum damage in the traditional patterning ALD process are effectively solved; the method is especially suitable for preparation of a high-quality two-dimensional material Van der Waals heterostructure and a three-dimensional micro-nano structure.

Etiquetas

Inventores
Liu LeiWang DeyiLu Jingqi刘磊王德义鲁景琪
Solicitantes
Univ SoutheastSoutheast UnivCentro de Investig ¨U N Nanomateriais de Madrid东南大学西班牙马德里高等材料研究院高性能纳米材料研究中心
Clasificacion ipc
C23C 16/ 04 A IC23C 16/ 455 A IC23C 16/ 52 A I
Publicaciones
CN.121992363.A
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