Resumen
Photovoltaic cell, photovoltaic panel and photovoltaic cell manufacturing method. Photovoltaic cell (ci) comprising at least one sub-cell of a first semiconductor (1) and a sub-cell of a second semiconductor (2) connected by three electrodes (t1, t2, t3 ). The second semiconductor is typically silicon, while the first semiconductor is a material with a larger forbidden band deposited closer to an electromagnetic radiation incidence surface. The first electrode (t1) is located on the anterior side of the photovoltaic cell (ci), while the second electrode (t2) and the third electrode (t3) are on the back face of photovoltaic said (ci). Both the second electrode (t2) and the third electrode (t3) are connected to the second semiconductor (2). The regions on both sides of the contact zone between the first semiconductor and the second semiconductor have the same type of majority carriers. This achieves a photovoltaic cell (ci) with a high conversion efficiency, capable of integrating into two-terminal devices. (Machine-translation by Google Translate, not legally binding)
Reivindicaciones
1. Photovoltaic cell (C<i> ) comprising at least one sub-cell of a first semiconductor (1) and a sub-cell of a second semiconductor (2), the sub-cell of the first semiconductor (1) being closer to a surface of incidence of electromagnetic radiation than the sub-cell of the second semiconductor (2) and the first semiconductor having a wider band-gap width than the second semiconductor,characterized in that it comprises: - a first electrode (T1) connected to the sub-cell of the first semiconductor (1) at an end opposite a first interface between the first semiconductor and the second semiconductor, both sides of the first interface comprising the same type of majority carriers; - a second electrode (T2) connected to the sub-cell of the first semiconductor (1) and to the sub-cell of the second semiconductor (2), the second electrode (T2) being accessible from an end opposite the surface of incidence of electromagnetic radiation; - a third electrode (T3) connected to the sub-cell of the second semiconductor (2) and accessible from the end opposite the surface of incidence of electromagnetic radiation. 2. Photovoltaic cell (C<i> ) according to claim 1,characterized in that the second semiconductor is crystalline silicon. 3. Photovoltaic cell (C<i> ) according to any of the preceding claims,characterized in that it further comprises at least two sub-cells of a third semiconductor (3) with a narrower band-gap width than the second semiconductor, the at least two sub-cells of a third semiconductor (3) being connected in series to the second electrode (T2) and the third electrode (T3); and the at least two sub-cells of a third semiconductor (3) being connected to the sub-cell of the second semiconductor (2) through a second interface opposite the first interface, both sides of the second interface comprising the same type of majority carriers. 4. Photovoltaic cell (C<i> ) according to any of the preceding claims,characterized in that the voltage between the first electrode (T1) and the second electrode (T2) has the same magnitude and opposite sign as the voltage between the third electrode (T3) and the second electrode (T2). 5. Photovoltaic cell (C<i> ) according to any of claims 1 to 4,characterized in that the voltage between the first electrode (T1) and the second electrode (T2) has the same sign and twice the magnitude of the voltage between the third electrode (T3) and the second electrode (T2). 6. Photovoltaic cell (C<i> ) according to any of the preceding claims,characterized in that it further comprises at least one selective membrane (16, 31) with transportation by tunnel effect. 7. Photovoltaic cell (C<i> ) according to any of the preceding claims,characterized in that it further comprises at least one passivating layer (12). 8. Photovoltaic cell (C<i> ) according to any of the preceding claims,characterized in that it further comprises at least one conducting layer (15). 9. Photovoltaic cell (C<i> ) according to any of the preceding claims,characterized in that it further comprises at least one floating emitter (24). 10. Photovoltaic panel (100)characterized in that it comprises a plurality of photovoltaic cells (C<i> ) according to any of claims 1 to 9. 11. Photovoltaic panel (100) according to claim 10,characterized in that the voltage between the first electrode (T1) and the third electrode (T3) of each photovoltaic cell or reference electrode (C<i> ) has the same sign and twice the magnitude of the voltage between the second electrode (T2) and the third electrode (T3); andin that the second electrode (T2) of each cell (C<i> ) is connected to the first electrode (T1) of an adjacent first cell (C<i-1> ) and to the third electrode (T3) of an adjacent second cell (C<i+1> ). 12. Photovoltaic panel (100) according to claim 11,characterized in that it comprises two conducting layers (39, 40) separated by an insulating layer (41). 13. Photovoltaic panel (100) according to claim 12,characterized in that the two conducting layers (39, 40) comprise a plurality of tiles, each tile at least partially covering a surface occupied by two adjacent cells. 14. Manufacturing method of photovoltaic cells (C<i> ) comprising growing in a crystalline form at least one sub-cell of a first semiconductor (1) on a sub-cell of a second semiconductor (2), the first semiconductor being closer to a surface of incidence of electromagnetic radiation than the second semiconductor and the first semiconductor having a wider band-gap width than the second semiconductor,characterized in that it comprises forming: - a first electrode (T1) connected to the sub-cell of the first semiconductor (1) at an end opposite a first interface between the first semiconductor and the second semiconductor, both sides of the first interface comprising the same type of majority carriers; - a second electrode (T2) connected to the sub-cell of the second semiconductor (2) and accessible from the end opposite the surface of incidence of electromagnetic radiation; and - a third electrode (T3) connected to the sub-cell of the first semiconductor (1) and to the sub-cell of the second semiconductor (2), the second electrode (T2) being accessible from an end opposite the surface of incidence of electromagnetic radiation. 15. Manufacturing method according to claim 14,characterized in that it further comprises growing in a crystalline form, on the sub-cell of the second semiconductor (2), two sub-cells of a third semiconductor (3) with a narrower band-gap width than the second semiconductor, the at least two sub-cells of the third semiconductor (3) being connected in series to the second electrode (T2) and to the third electrode (T3); and the at least two sub-cells of a third semiconductor (3) being connected to the sub-cell of the second semiconductor (2) through a second interface opposite the first interface, both sides of the second interface comprising a same type of majority carriers.
