Resumen
It is possible to create intermediate band materials from silicon by means of ion implantation with high doses of elements that produce deep centers in the silicon. However, the intermediate band material (4) is produced on the surface of the implanted wafer (7), posing a technical problem since in order to produce a complete solar cell it is necessary to surround the intermediate band material with a type p semiconductor (5) and another type n semiconductor (6) using a low temperature process that prevents the segregation and formation of clusters of the implanted element. In this patent, this problem is solved by creating the p n structure by means of the deposition of high-quality amorphous hydrogenated silicon layers at a low temperature.