Reivindicaciones

1. Use of chalcogenides which comprise In atoms in octahedral positions, and wherein metal atoms of the compound which are in octahedral position have been substituted in part by a transition element to generate a partially occupied intermediate band within the bandgap, in the manufacturing of materials or devices for photonic applications based on the existence of said intermediate band. 2. Use in the manufacturing of materials or devices for photonic applications of the compounds described in claim 1, characterized in that the chalcogenides are sulfides. 3. Modified indium sulfide material, characterized in that the indium atoms of the compound In<2> S<3> found in octahedral position have been substituted in part by Ti atoms or V atoms. 4. Use of the material described in claim 3, in the manufacturing of materials or devices for photonic applications. 5. Use in the manufacturing of materials or devices for photonic applications of the chalcogenide compounds mentioned in claims 1-4, wherein between 15 and 0.1% of the metal atoms of the compound in octahedral position have been substituted by a transition element. 6. Use of the chalcogenide compounds mentioned in claims 1-5 in solar photovoltaic cells. 7. Use of the chalcogenide compounds mentioned in claims 1-5 in low energy photon detectors. 8. Use of the chalcogenide compounds mentioned in claims 1-5 in photocatalytic, photosynthetic or photoelectrochemical processes. 9. Use of the chalcogenide compounds mentioned in claims 1-5 in photonic conversion processes. 10. Solar photovoltaic cells characterized in that they use the materials mentioned in claims 1-5 as light absorbents.