Reivindicaciones

1. A method for suppressing non-radiative recombination in semiconductors with intermediate levels due to impurities consisting of increasing the concentration of such impurities to a point at which the wavefunctions representing the trapped states become delocalized and they are shared among many impurities in the semiconductor. 2. A method according to claim 1, characterized in that the concentration of impurities is achieved by ionic implantation, by diffusion of the impurities into the semiconductor material or by chemical or physical deposition of an epitaxial crystal of a suitable composition containing the impurities. 3. A method according to claims 1 or 2, characterized in that the redistribution of the impurities is assisted by thermal annealing. 4. A method according to claims 1 to 3, characterized in that the semiconductor belongs to group III-V or II-VI and the impurities are any chalcogenide or any transition element. 5. A method according to claims 1 to 4, characterized in that the density of impurities is increased to over 5.9x10<19> cm<-3> . 6. A material (intermediate band material) manufactured according to the method described in claims 1 to 5, characterized by the existence of an electronic band (intermediate band) isolated from the conduction and valence bands through a null density of states. 7. A material manufactured according to the method described in claims 1 to 5, characterized by having intermediate levels. 8. A material according to claims 6 or 7, characterized in that the intermediate band or the intermediate levels originate from a chemical compound or an alloy where the species of lower concentration have a density above the density deduced from claim 1 or indicated in claim 5. 9. Use of the method according to claims 1 to 5 and of one or more of the intermediate band materials or materials with intermediate levels according to claims 6 to 8 for the manufacture of solar cells, photodetectors, LEDs, lasers and any other electrical or optoelectronic device.