Resumen
The present invention relates to a method for obtaining mosfet transistor door structures with the combination of two plasma deposition techniques of dielectric materials: electron cyclotron resonance (ecr) and high pressure sputtering (hps). The deposit of dielectrics on si with hps does not require, during the manufacturing process, gases with metallic elements, usually used when using conventional techniques, extremely toxic and polluting and that greatly increase the costs of waste processing. Before depositing the dielectric, the si is protected with the ecr technique, with which it is obtained by nitriding the si, under n2, a very thin layer of sin (5a). On this layer a layer of sc2 o3 (5b) is deposited with hps under ar. Optionally, on top of this dielectric and also with hps, the metallic electrode (6) of tan is deposited in ar atmosphere. (Machine-translation by Google Translate, not legally binding)