Resumen
Procedures for the connection of a very capacitive load (17) to a voltage bus (13) of an electric distribution system, by using a solid state power controller (SSPC) (15), where the current through the SSPC (15) is controlled actively by maintaining one of its parameters (the current and/or the derivative of the current) constant during the whole connection time (tc) of said very capacitive load (17) or during each one of a set of stretches of said connection time (tc). The invention also refers to SSPCs structured to carry out said procedures.
Reivindicaciones
CLAIMS 1 .- A procedure for the connection of a very capacitive load (17) to a voltage bus (13) of an electric distribution system, by using a solid state power controller (SSPC) (15), characterized in that the current through the SSPC (15) is controlled actively by maintaining one of its parameters constant during the whole connection time (tc) of said very capacitive load (17), or during each one of a set of stretches of said connection time (tc). 2.- A procedure according to claim 1 , wherein the capacity of said very capacitive load (17) is greater than 150 microfarads. 3. - A procedure according to any of claims 1 -2, wherein said parameter is the magnitude of the current (ISSPC), which is kept constant at a value less than or equal to the maximum value (IMAX) endured by the SSPC (15) during the whole connection time (tc). 4. - A procedure according to any of claims 1 -2, wherein said parameter is the derivative (K) of the current (ISSPC), which is maintained constant during the whole connection time (tc), while the absolute value of the current (ISSPC) is kept equal to or less than the maximum value (IMAX) endured by the SSPC (15). 5. - A procedure according to any of claims 1 -2, wherein during a first stretch of time (ts) said parameter is the derivative (K) of the current (ISSPC) until it reaches an objective absolute value equal to or less than the maximum value (IMAX) endured by the SSPC (15), and during a second stretch of time (tm) said parameter is the magnitude of the current (ISSPC), which is maintained constant at said objective value. 6.- A procedure according to claim 5, wherein the first stretch (t<s>) is comprised between 70% and 80% of the connection time (t<c>), and said second stretch (t<m>) is comprised between 30% and 20% of the connection time (t<c>). 7.- A procedure according to any of the claims 1 -2, wherein during each of the first stretches (ti , tn-i ) of the connection time (tc), said parameter is the derivative (K-i , K<n->i ) of the current (ISSPC) until it reaches an objective absolute value equal to or less than the maximum value (IMAX) endured by the SSPC (15), and during the final time stretch (tn), said parameter is the magnitude of the current (ISSPC), which is maintained constant at said objective value. 8. - A procedure according to claim 7, wherein during all said stretches (ti , tn), the current (ISSPC) is inside the semiconductor safe operation curve (SOA) of the SSPC (15). 9. - An SSPC (15) used in an electrical distribution system between a voltage bus (13) and a very capacitive load (17) which comprises a semiconductor (21 ), a driver (23), a microcontroller (33), an internal power source (27), a measuring device for the SSPC current (29), and a measuring device for the load voltage (31 ), characterized in that also comprises current control circuits (25, 26) connected to said microcontroller (33) and said driver (23) which allows carrying out of a connecting procedure of said very capacitive load (17) according to any of the claims 1 -8. 10.- An SSPC (15) according to claim 9, wherein said current control circuits (25, 26) comprise suitable components to carry out the active control of the current (ISSPC) through the SSPC (15) regulating the voltage (v<G>s or V<CE>) of the control entrance of the semiconductor (21 ). 1 1 .- An SSPC (15), according to any of the claims 9-10, wherein the semiconductor (21 ) is a MOSFET. 12.- An SSPC (15), according to any of the claims 9-10, wherein the semiconductor (21 ) is an IGBT.
