Resumen
The invention describes a carbon-based material with fullerene-type structure and more specifically consists of sp2 hybridization carbon partially hydrogenated up to an atomic content of 35%, preferably between 5 and 35%. The method for producing it is performed on a substrate at low temperature - between 25 and 300 DEG C - using the plasma-assisted chemical vapour deposition (PACVD) technique, containing, within it, highly energized ions and applicable to non-heat-resistant materials covering a wide range of applications. These materials are useful for the production of, for example, mechanical or optical devices, magnetic means, aircraft wings, glasses and plastics or photodetectors.