Resumen
An external port (100) for bidirectional transmission of radio frequency, RF, signals for an integrated circuit, IC, package, wherein the IC package (1000) comprises a case (1010) having an access wall (1020) and an IC chip (1030) established on a first substrate (1040) contained in the case (1010), the external port (100) comprising a dielectric waveguide structure (IC DRW 1) embeddable in the access wall (1020) of the case, the dielectric waveguide structure (IC DRW 1) configured for bidirectional transmission of RF signals.
Reivindicaciones
1. An external port (100) for bidirectional transmission of radio frequency, RF, signals for an integrated circuit, IC, package, wherein the IC package (1000) comprises a case (1010) having an access wall (1020) and an IC chip (1030) established on a first substrate (1040) contained in the case (1010), the external port (100) comprising: - a dielectric waveguide structure (IC DRW 1) embeddable in the access wall (1020) of the case, the dielectric waveguide structure (IC DRW 1) configured for bidirectional transmission of RF signals. 2. The external port (100) according to claim 1, wherein the dielectric waveguide structure (IC DRW 1) works as an ultra-wide band dielectric IC port and is configured to be connectable to a second IC chip, an external waveguide, a dielectric structure, or an antenna. 3. The external port (100) according to claims 1 or 2, wherein the dielectric waveguide structure (IC DRW1) provides a high-pass characteristic interconnection operating over a high frequency range starting from a low cut-off frequency f0 in the microwave range or in the millimeter-wave range, up to a higher cut-off frequency of at least 100 GHz. 4. The external port (100) according to claims 1 to 3, further comprising: - a second substrate (110) connected to the dielectric waveguide structure (IC DRW1) and connectable to the first substrate (1040); and - a first metallization (120A) connectable to the IC chip (1030) and established on the substrate (1040). 5. The external port according to the previous claim, wherein the second substrate (110) comprises RF substrates such as quartz, laminates and ceramics or Silicon. 6. The external port according to the previous claim, wherein dielectric waveguide structure (IC DRW1) comprises a tapered end. 7. The external port according to claims 4 to 6, further comprising: - a second metallization (120B) electrically connected to the first metallization (120A) and mechanically connected to the dielectric waveguide structure (IC DRW 1). 8. The external port according to claim 7, wherein the first metallization (120A) and the second metallization (120B) are metal waveguide structures providing a low-pass characteristic interconnection, operating over a low frequency range from DC up to a high cut-off frequency fCH in the millimeter wave range. 9. The external port (100) according to the previous claim, further comprising: - a first electrical interconnection (140A) configured to electrically connect the first metallization (120A) and the second metallization (120B). 10. The external port (100) according to the previous claim, wherein the first electrical interconnection (140A) comprises conductive epoxy, wire bonding, or ribbon bonding. 11. The external port (100) according to any of the preceding claims, further comprising: - two metal pins (150) embeddable in the access wall (1020) and connectable to the IC chip (1030) by metallic connecting means (150A). 12. The external port (100) according to the preceding claim, wherein the metallic connecting means (150A) comprises wire bonding, epoxy or ribbon bonding. 13. The external port (100) according to claims 11 or 12, further comprising a second electrical interconnection (140B) configured to electrically connect the two metal pins (150) to the second metallization (120B). 14. An integrated circuit, IC, package (1000) for transmitting or receiving RF signals, the IC package (1000) comprising the external port according to claims 1 to 13. 15. The IC package according to claim 14, wherein the first substrate (1040) comprises RF substrates such as quartz, laminates and ceramics or silicon. 16. The IC package (1000) according to claims 14 or 15, wherein the access wall (1020) comprises a dovetail shape or a V-groove shape.
