Resumen
A position-sensitive detector (1) based on lateral photovoltaic effect comprising a semiconductor substrate (14), an oxide layer (13), on the substrate (14), said oxide layer (13) with a thickness is described from 1 nm to 2 nm and a plurality of metal contacts (12) located on the oxide layer (13), with said contacts interconnected by a metal line (11). Said line (11) has a length at least 100 times its width, the width of the line (11) being at least 1,000 times greater than its thickness. By means of a measurement system with a laser illumination source (4), a voltmeter (6) and a processing means (7), the position on the detector (1) where the beam coming from the light source can be measured ( 4) with temporal resolution greater than 1 millisecond. (Machine-translation by Google Translate, not legally binding)