Current infrared detectors are expensive because they are based on materials with disadvantages. Si supersaturated with deep impurities is a potential alternative, which is why attempts have been made to produce it using various production techniques, however, so far only very thin layers have been obtained, and there are issues such as diffusion of the impurities or other drawbacks which prevent its use in infrared detectors. An alternative method is proposed for producing thick films of Si supersaturated with deep impurities, combining the the low-pressure radio-frequency cathodic sputtering deposition technique using multiple magnetron cathodes and the subsequent low-temperature microwave crystallisation using solid-state sources in a single-mode cavity. The obtained layers have characteristics that allow them to be used in infrared detection devices.