A method for forming a nanomagnet array is provided, wherein the method comprises forming an array of nanoobjects on the substrate, forming a first layer on the nanoobjects in such a way that magnetic nanodots are formed on the nanoobjects, wherein the magnetic nanodots are substantially magnetically decoupled.
1. A method for forming a nanomagnet array, the method comprising: forming an array of nanoobjects on a substrate; and forming a first layer on the nanoobjects in such a way that magnetic nanodots are formed on the nanoobjects, wherein the magnetic nanodots are magnetically decoupled. 2. The method according to claim 1, wherein the forming of the array of nanoobjects is done by using a self-organizing process. 3. The method according to claim 1 or 2, further comprising: forming an intermediate layer onto the substrate before depositing the first layer. 4. The method according to claim 3, wherein the intermediate layer comprises a non-magnetic metal. 5. The method according to claim 4, wherein the non-magnetic metal has a high polarizability and/or spin-orbit coupling. 6. The method according to claim 4, wherein the non-magnetic metal of the intermediate layer has a different atomic distance than a material of the first layer. 7. The method according to any one of the claims 1 to 6, wherein the first layer comprises a ferromagnetic material. 8. The method according to any one of the claims 1 to 7, wherein the forming of the first layer is done by using a grazing incidence deposition process. 9. The method according to claim 8, wherein the grazing incidence deposition is performed under an incidence angle in such a way that the first layer comprises different regions having different thicknesses. 10. The method according to claim 9, wherein one of the different thicknesses is above a predetermined thickness threshold. 11. The method according to any one of the claims 1 to 7, further comprising forming an additional layer, wherein the first layer comprises a ferromagnetic material, and wherein the additional layer comprises an antiferromagnetic material. 12. A nanomagnet array comprising: a substrate having a plurality of nanoobjects formed on one surface of the substrate; and a first layer formed on the nanoobjects; wherein the first layer is formed in such a way that an array of magnetic nanodots are formed on the plurality of nanoobjects in such a way that the magnetic nanodots are magnetically decoupled from each other. 13. The nanomagnet array according to claim 12, wherein the first layer comprises a ferromagnetic material. 14. The nanomagnet array according to the claim 12 or 13, further comprising: an intermediate layer, which is arranged between the substrate and the first layer. 15. The nanomagnet array according to claim 14, wherein the intermediate layer comprises a non-magnetic material. 16. The nanomagnet array according to any one of claims 12 to 15, wherein the first layer has a first thickness on a top-surface of the plurality of nanoobjects and a second thickness on side-faces of the plurality of nanoobjects. 17. The nanomagnet array according to any one of the claims 12 to 16, further comprising: a top layer, which is formed on the first layer. 18. The nanomagnet array according to claim 17, wherein the top layer is formed of a non-magnetic material. 19. A Magneto-resistive Random Access Memory comprising: a nanomagnet array according to any one of the claims 12 to 18. 20. The Magneto-resistive Random Access Memory according to claim 19, further comprising: a plurality of wordlines; and a plurality of bitlines, wherein the plurality of nanodots is connected to the plurality of wordlines and the bitlines.