Resumen
Method for manufacturing of optoelectronic devices based on thin-film, intermediate band materials, characterized in that it comprises, at least, the following steps: - a first stage wherein a substrate (1) is coated with a metal layer acting as electrode (2); - a second stage, whereby atop the metal layer (2) a p-type semiconductor (3) is deposited; and - a third stage, whereby the intermediate band material is processed; and wherein such an intermediate band material comprises nanoscopic structures (4) of multinary material of the type (Cu,Ag)(AI,Ga,In)(S,Se,Te) 2 embedded in a matrix (5) of a similar composition, except for the absence of, at least, one cationic species present in the nanostructure.
Reivindicaciones
1. Method for manufacturing of optoelectronic devices based on thin-film, intermediate band materials, comprising, at least, the following steps: - a first stage wherein a substrate (1) is coated with a metal layer (2) acting as electrode; - a second stage, whereby atop of the metal layer (2) a p-type semiconductor (3) is deposited; and - a third stage, whereby the intermediate band material is processed; and wherein such an intermediate band material comprises in nanoscopic structures (4) of multinary material of the type (Cu,Ag)(AI,Ga,In)(S,Se,Te)<2> embedded in a matrix (5) of a similar composition, except for the absence of, at least, one cationic species present in the nanoscopic structure. 2. Method according to claim 1, wherein the substrate (1) is a rigid structure. 3. Method according to claim 2, wherein the substrate (1) is glass. 4. Method according to claim 1, wherein the substrate (1) is a flexible structure. 5. Method according to claim 4, wherein the substrate (1) is a metal or a plastic foil. 6. Method according to claim 1, wherein the metal layer (2) is a material resistant against chalcogen-containing reactive atmospheres. 7. Method according to claim 1, wherein the metal layer (2) is made of Molybdenum (Mo). 8. Method according to claim 1, wherein the intermediate band material is based on structures of CuGaSe<2> embedded into Ga<2> Se<3> . 9. Method according to claim 1, wherein the p-type semiconducting layer (3) is CuGaS<2> with a non-critical thickness up to 1 µm. 10. Method according to claim 1, wherein the absence of, at least, one cationic species in the matrix material (5) produces abrupt changes (hetero-junctions) in the band diagram of the resulting material, which are localized at the heterojunctions between the dissimilar materials, of three-dimensional nature in bulky structures; and whereby the band offsets at conduction and/or valence bands of both materials will depend on their selection and on their electron affinities.
