The invention discloses atomic layer deposition equipment and method based on a local direct writing technology. The equipment comprises a deposition cavity for limiting a vacuum environment, a temperature-controllable precise displacement platform, a movable local reaction unit integrated with a micro reaction head array and a micro-area sealing structure, a three-dimensional micro-motion mechanism for driving the local reaction unit to do spatial motion, and a multi-source precursor conveying system. According to the method, the local closed or semi-closed reaction micro-area is formed on the surface of the substrate through the micro-area sealing structure, and the atomic-scale high-quality patterned film is directly drawn according to the preset path under the condition that mask and photoetching are not needed in combination with the alternating pulse time sequence of three-dimensional motion control and atomic layer deposition. According to the method, the flexibility of direct writing type printing is combined with the high-quality thin film growth capacity of atomic layer deposition, the problem that high-resolution and complex patterning deposition is difficult to achieve through a traditional ALD technology is effectively solved, and the method is particularly suitable for flexible manufacturing of multi-layer heterostructures and complex micro-nano devices.