Logo
About usInnovation CMChallengesEuropa2iEntrepreneurshipR&D&I SearchAgentsEventsReports
en
Hybrid structure for ultra-wideband terahertz generation and reception with semiconductor devicesCM Patents

Índice de la ficha

Updated at
24/07/2026
Numero publicacion
TW.202443220.A
Fecha publicacion
01/11/2024
Numero solicitud
TW20230114458
Fecha presentacion
18/04/2023

En detalle

Resumen

An ultra-wideband hybrid structure for transmitting high-frequency electrical signals, the structure comprising a substrate, a high-speed semiconductor substrate connected to the substrate of the ultra-wideband structure, an electrical interconnection established between the substrate and the high-speed semiconductor substrate, an ultrahigh speed device defining a first access port and established on the high-speed semiconductor substrate, a dielectric waveguide structure defining a second access port, the structure established on the substrate and on the high-speed semiconductor substrate, the structure comprises a tapered end connectable to the first access port of the ultrahigh speed device, a metal waveguide structure providing a low-pass characteristic interconnection, the structure established on the substrate and on the high-speed semiconductor substrate, wherein the metal waveguide structure comprises a metal waveguide pattern defining a tapered coupler connected to the access port of the high-speed circuit or component.

Etiquetas

Inventores
Carpintero del Barrio GuillermoRivera Lavado AlejandroGarcia Munoz Luis EnriqueAli Muhsin
Solicitantes
Universidad Carlos III de Madrid
Clasificacion ipc
G02B 6/ 42 A IH01L 23/ 15 A IH01L 23/ 48 A IH01P 3/ 16 A IH01P 5/ 08 A I
Publicaciones
TW.202443220.A
Logo

Innovation CM
Challenges
Europa2i
Entrepreneurship
R&D&I Search
Agents
Events
Reports
About us
Contact
Give us your opinion
Cookies
Legal notice
Privacy

© Copyright Espacio Madrileño de Investigación e Innovación 2026