Reivindicaciones

1. Procedure for obtaining films of intermediate band semiconductor materials characterized in that it comprises the following steps: - preparation of the mixture of the components of the semiconductor material in the form of a powder, - thermal processing of the mixture of the components of the semiconductor material obtained in the previous stephigher than the melting point of its components up to its synthesis in the form of a thermodynamically stable polycrystalline semiconductor material, - disintegration of the polycrystalline material obtained in the previous step by means of mechanical grinding until a homogeneous powder is obtained, - compressing of the homogenous powder until it has a consistency and shape suitable for its placing onto an electrode of a sputtering machine, - Obtaining the thin films of intermediate band semiconductor material by means of the sputtering of the compressed powder. 2. Procedure in accordance with demandaccording to claim 1 characterized becausein that, in a preferred method, the semiconductor material consists of a stoichiometric mixture of its components. 3. Procedure in accordance with demandsaccording to claim 1 or claim 2 characterized becausein that, in a preferred method, before the thermal processing, the mixture of the semiconductor material is introduced into a recipient container in which there is a controlled atmosphere in order to avoid the contamination of the mixture at high temperatures.